Silicon (Si)
Persistent Lines of Singly Ionized Silicon ( Si II )
Int. Wavelength Aki Energy Configuration Term J Line Aki
(Å) (108s-1) Levels (cm-1) Ref. Ref.
300 1190.4160 6.86 0.00 3s2(1S)3p 2P° 1/2 KE74 M03
84004.26 3s3p2 2P 3/2
700 1193.2898 27.3 0.00 3s2(1S)3p 2P° 1/2 KE74 M03
83801.95 3s3p2 2P 1/2
800 1194.5004 34.0 287.24 3s2(1S)3p 2P° 3/2 KE74 M03
84004.26 3s3p2 2P 3/2
500 1260.4223 24.7 0.00 3s2(1S)3p 2P° 1/2 KE74 M03
79338.50 3s2(1S)3d 2D 3/2
1000 1264.7379 29.3 287.24 3s2(1S)3p 2P° 3/2 KE74 M03
79355.02 3s2(1S)3d 2D 5/2
300 1533.4318 7.50 287.24 3s2(1S)3p 2P° 3/2 KE74 M03
65500.47 3s2(1S)4s 2S 1/2
100 3856.017 55325.18 3s3p2 2D 5/2 S61b
81251.32 3s2(1S)4p 2P° 3/2
50 4128.067 79338.50 3s2(1S)3d 2D 3/2 S61b
103556.16 3s2(1S)4f 2F° 5/2
70 4130.893 79355.02 3s2(1S)3d 2D 5/2 S61b
103556.03 3s2(1S)4f 2F° 7/2
130 5041.026 0.98 81191.34 3s2(1S)4p 2P° 1/2 S61b FW96
101023.05 3s2(1S)4d 2D 3/2
130 5055.981 1.26 81251.32 3s2(1S)4p 2P° 3/2 S61b BBC95
101024.35 3s2(1S)4d 2D 5/2
130 5669.562 0.50 114529.14 3s3p(3P°)3d 4F° 9/2 S61b BBC95
132162.29 3s3p(3P°)4p 4D 7/2
130 6347.103 0.66 65500.47 3s2(1S)4s 2S 1/2 S61b BBC95
81251.32 3s2(1S)4p 2P° 3/2
100 6371.359 0.77 65500.47 3s2(1S)4s 2S 1/2 S61b BBC95
81191.34 3s2(1S)4p 2P° 1/2