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Data Analysis Sheet SH.1.a

Data analysis sheet for step height measurements from one step height test structure
for use with the MEMS 5-in-1 RMs

a)                  
b)

Figure SH.1.a.1.  For a CMOS step height test structure: a) a design rendition and b) a cross-section.

To obtain the following measurements, consult SEMI standard test method MS2 entitled
"Test Method for Step Height Measurements of Thin Films." 



                                      

                                    

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Table 1 - Preliminary INPUTS

Data Set Prelims

Description

1 temp °C temperature during measurement (should be held constant)
2 relative
humidity
% relative humidity during measurement (if not known, enter -1)
3 proc

   

       

which process?
4 which        

    

        

      

                 

       

For CMOS RM chips, which of the six step height measurements?
For MUMPs chips, which quad?
5 which2        

    

        

      

        

For CMOS chips, which iteration of the test structure where "first" corresponds to the topmost test structure in the column?
6 orient      

  

 

orientation of the test structure on the test chip
7 × magnification
8 align
 
alignment ensured?
9 level
 
data leveled?
10

μm

certified value of physical step height standard used for calibration
11 μm certified one sigma uncertainty of the certified physical step height standard used for calibration
12 μm maximum of two uncalibrated values (σbefore and σafter) where σbefore is the standard deviation of six measurements taken across the physical step height standard before the data session and σafter is the standard deviation of six measurements taken across the physical step height standard after the data session
13 μm uncalibrated average of the six calibration measurements used to calculate σ6ave
14 σ μm maximum of two uncalibrated values (σsame1 and σsame2)  where σsame1 is the standard deviation of six measurements taken on the physical step height standard at the same location before the data session and σsame2 is the standard deviation of six measurements taken at this same location after the data session
15 μm uncalibrated average of the six calibration measurements used to calculate σ6same
16 μm uncalibrated drift in the calibration data (i.e., the uncalibrated positive difference between the average of the six measurements taken before the data session at the same location on the physical step height standard and the average of the six measurements taken after the data session at this same location)
17 the z-calibration factor (for the given magnification)
18 % if applicable, the maximum relative deviation from linearity over the instrument's total scan range, as quoted by the instrument manufacturer (typically less than 3 %)
19 srepeat(samp) % step height relative repeatability standard deviation obtained from step height test structures fabricated in a process similar to that used to fabricate the sample
20 s μm uncalibrated surface roughness of platNX measured as the smallest of all the values obtained for splatNXt.  (However, if the surfaces of platNX, platNY, and platNr all have identical compositions, then it is measured as the smallest of all the values obtained for splatNXt, splatNYt, and splatNrDt in which case sroughNX=sroughNY.)
21 s μm uncalibrated surface roughness of platNY measured as the smallest of all the values obtained for splatNYt (However, if the surfaces of platNX, platNY, and platNr all have identical compositions, then it is measured as the smallest of all the values obtained for splatNXt, splatNYt, and splatNrDt in which case sroughNX=sroughNY.)

                                      

                                    

Nomenclature:
    N refers to the test structure number (1, 2, 3, etc.),
    X and Y refer to the platform letter (A, B, C, etc.),
    r indicates a reference platform,
    D directionally indicates which reference platform, and
    t indicates which data trace (a, b, or c).

Table 2 - Platform INPUTS and CALCULATIONS

Uncalibrated PLATFORM INPUTS (in μm) Calibrated CALCULATIONS (in μm)
1 7 13
2 8 14
3 9 15
4 s= 10 s  
5 s= 11 s 16 s
6 s 12 s 17 s
Note 1:  stepNXYt = calz (platNYt-platNXt)
Note 2:  splatNXave = calz AVE(splatNXa, splatNXb, splatNXc)
Note 3:  splatNYave = calz AVE(splatNYa, splatNYb,
splatNYc)


Table 3 - Calibrated OUTPUTS (in μm)

    ucert ucal ulinear urepeat(samp)

18
Note 4:  stepNXY = AVE(stepNXYa, stepNXYb, stepNXYc)
Note 5:  uLstep = SQRT{[splatNXave2- (calz sroughNX)2] + [splatNYave2- (calz sroughNY)2]}
Note 6:  uWstep = σstepNXY = STDEV(stepNXYa, stepNXYb, stepNXYc)
Note 7:  ucert = |σcert stepNXY / cert|
Note 8
:  ucal = |σ6ave stepNXY / z6ave|
Note 9:  urepeat(shs) = |σ6same stepNXY z6same|
Note 10:  udrift = |(zdrift calz) stepNXY / [2(1.732) cert]|
Note 11:  ulinear = |zlin stepNXY / (1.732)|
Note 12
:  urepeat(samp) = srepeat(samp) |stepNXY|
Note 13:  ucSH = SQRT(uLstep2+uWstep2+ucert2+ucal2+urepeat(shs)2+udrift2+ulinear2+urepeat(samp)2
              (Each of the standard uncertainty components is obtained using a Type B analysis,
.              except for uWstep, ucal, urepeat(shs), and urepeat(samp) which use a Type A analysis.)

USH = 2ucSH μm   
 (expanded uncertainty)
3ucSH μm
stepNXY - USH  = μm     (a lower bound for stepNXY)
stepN
XY + USH  = μm    (an upper bound for stepNXY)

Report the results as follows:  If it is assumed that the estimated values of the uncertainty
components are approximately Gaussianly distributed with approximate combined standard
uncertainty ucSH, the step height is believed to lie in the interval stepNXY ± ucSH (expansion 
factor k=1) representing a level of confidence of approximately 68 %. 


Modify the input data, given the information supplied in any flagged statement below, if applicable, then recalculate:

1.
2. The value for temp should be between 19.4 °C and 21.6 °C, inclusive.
3. The value for relative humidity (if known) should be between 0 % and 60 %, inclusive.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15. μm and less than or equal to the smallest measured value for splatNXt and splatNYt, respectively.
16.
17.
18.  
19. splatNYt should be between 0.00 μm and 0.100 μm, inclusive.
20.
21.

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Email questions or comments to mems-support@nist.gov.

NIST is an agency of the U.S. Commerce Department.
The Semiconductor and Dimensional Metrology Division is within the Physical Measurement Laboratory.
The MEMS Measurement Science and Standards Project is within the Nanoscale Metrology Group.

Date created: 4/5/2006
Last updated:
4/26/2013