Figure SG.2.1.
Top view of cantilever test
structure used to measure
strain gradient.
To
obtain the following
measurements, consult ASTM
standard test method E 2246
entitled
"Standard Test
Method for Strain Gradient
Measurements of Thin,
Reflecting Films
Using an
Optical Interferometer" and
NISTIR 7291 entitled "MEMS
Length and Strain
Round
Robin Results with
Uncertainty Analysis."
date data taken (optional) =
/
/
identifying words (optional)
=
instrument used (optional)
=
fabrication facility/process
(optional) =
test chip name
(optional) =
test chip number
(optional) =
filename of 3-D data set
(optional) =
filename of 2-D data
traces (optional) =
OUTPUTS
(calibrated values):
x1ave
=
μm
s =
from Trace "c"
s = 1 (for downward
bending cantilevers or
if data was taken from the
bottom of an upward bending
cantilever)
s = −1 (for upward
bending cantilevers unless
data was taken from the
bottom of an upward bending
cantilever)
Rint
=
μm from
Trace "b"
a
=
μm from
Trace "b"
b
=
μm from
Trace "b"
sg =
m−1
from Trace "b"
Rint
=
μm from
Trace "c"
a
=
μm from
Trace "c"
b
=
μm from
Trace "c"
sg
=
m−1
from Trace "c"
(USE THIS VALUE)
uW =
m−1 from
two or three traces
uRave =
m−1 from
Trace "c"
unoise =
m−1 from
Trace "c"
uxcal =
m−1
from Trace "c"
ucert =
m−1
from Trace "c"
urepeat(shs) =
m−1
from Trace "c"
udrift =
m−1
from Trace "c"
ulinear =
m−1
from Trace "c"
uzres =
m−1
from Trace "c"
uxres =
m−1
from Trace "c"
ucsg
=
SQRT[uW2
+
uRave2
+
unoise2
+ uxcal2
+
ucert2
+
urepeat(shs)2
+ udrift2
+ ulinear2
+ uzres2
+
uxres2]
(Each
of the standard uncertainty
components is obtained using
a Type B analysis.)
ucsg
=
m−1 from
two or three traces
Rint
=
μm from
Trace "d"
a
=
μm from
Trace "d"
b
=
μm from
Trace "d"
sg =
m−1
from Trace "d"
Report the results as
follows: Since it can be assumed that the
estimated values of the
uncertainty
components are
approximately uniformly
or Gaussianly distributed with
approximate combined standard
uncertainty
ucsg, the strain gradient is believed to lie in the
interval
sg
±
ucsg (expansion
factor k=1)
representing a level of
confidence of approximately
68 %.
Modify
the input data, given the
information supplied in any
flagged statement below, if
applicable, then
recalculate:
1. |
|
Please fill
out the entire form. |
2. |
|
The
value for the design length
should be between
0
μm
and 1000
μm. |
3. |
|
The
value for the design width
should be between
0
μm
and 60
μm. |
4. |
|
Is the
magnification appropriate
given the design length ? |
5. |
|
Magnifications at or
less than 2.5×
shall not be used. |
6.
|
|
Is 0.95 < calx <
1.05 but not equal to
"1"? If not,
recheck your x-calibration. |
7. |
|
The value for
interx should be
between 0
μm
and 1500
μm. |
8. |
|
The value for
σxcal
should be between 0
μm
and 4
μm. |
9. |
|
The
value for
xres should
be between 0
μm
and 2.00
μm. |
10. |
|
Is 0.95
< calz < 1.05 but not
equal to "1"? If not,
recheck your z-calibration. |
11.
|
|
The
value for cert
should be greater than 0 μm
and less than 25 μm. |
12. |
|
The
value for
σcert
should be between 0 μm and
0.100 μm. |
13. |
|
The
value for
zrepeat(shs)
should be between 0 μm and
0.070 μm. |
14.
|
|
The
value for
zdrift
should be between 0 μm and
0.010 μm. |
15.
|
|
The
value for
zperc
should be between 0 % and 3
%. |
16. |
|
The value for zres
should be greater than 0
μm and less than or
equal to 0.005 μm. |
17. |
|
The
value for
Rtave
should be between 0 μm and
0.100 μm and greater than
Rave. |
18. |
|
The
value for
Rave
should be between 0 μm and
0.020 μm. |
19. |
|
Alignment has not been
ensured. |
20. |
|
Data has
not been leveled. |
21. |
|
x1min should
be greater than x1max. |
22. |
|
The
calibrated values for
x1min and
x1max are
greater than 10 μm apart. |
23. |
|
In Trace
"b," the calibrated values
of x1,
x2, and x3
should be > x1ave. |
24. |
|
In Trace
"c," the calibrated values
of x1,
x2, and x3
should be > x1ave. |
25. |
|
In Trace
"d," the calibrated values
of x1,
x2, and x3
should be > x1ave. |
26. |
|
In
Traces "b," "c," and "d,"
the value for s is
not the same.
|
Return to
Main MEMS Calculator Page.
Email
questions or comments to
mems-support@nist.gov.
NIST is an agency of the
U.S. Commerce Department.
The
Semiconductor and Dimensional
Metrology
Division is within the
Physical Measurement Laboratory.
The
MEMS Measurement Science and
Standards Project
is within the
Nanoscale Metrology Group.
Date created: 12/4/2000
Last updated: 4/26/2013